Power Semiconductor Module Arrangement and Method for Producing the Same

ABSTRACT

A power semiconductor module arrangement includes a base plate configured to be arranged in a housing, a contact element configured to, when the base plate is arranged in the housing, provide an electrical connection between the inside and the outside of the housing, and a connecting element configured to connect the contact element to the base plate. The connecting element includes a first electrically insulating layer, a second electrically insulating layer configured to attach the contact element to the first electrically insulating layer, and a third electrically insulating layer configured to attach the first electrically insulating layer to the base plate.

TECHNICAL FIELD

The instant disclosure relates to a power semiconductor modulearrangement and to a method for producing a power semiconductor modulearrangement.

BACKGROUND

Power semiconductor module arrangements often include a base platewithin a housing. A main substrate is arranged on the base plate. Asemiconductor arrangement including a plurality of controllablesemiconductor elements (e.g., two IGBTs in a half-bridge configuration)is arranged on the main substrate. A contact element, which allows forcontacting the semiconductor arrangement from outside the housing, isusually arranged on a separate substrate that is arranged on the samebaseplate as the main substrate, but distant from the main substrate.Electrical connections between the contact element on the separatesubstrate and the semiconductor arrangement on the main substrateusually include wires such as bonding wires, for example. The mainsubstrate and the separate substrate usually each comprise a substratelayer (e.g., a ceramic layer), a first metallization layer deposited ona first side of the substrate layer and a second metallization layerdeposited on a second side of the substrate layer. In some applicationsthe substrates, in particular the metallization layers of thesubstrates, may be exposed to corrosive gases. When exposed to corrosivegases and further under the influence of electric fields and possiblymoisture, dendritic structures may be formed from mobile metal ions ofthe metallic layer and anions from the corrosive gas (e.g., S²⁻).

There is a need for a power semiconductor module arrangement that avoidsformation of dendritic structures and provides a cost-effective, simplesolution that may be manufactured by means of an easy manufacturingmethod.

SUMMARY

The power semiconductor module arrangement includes a base plateconfigured to be arranged in a housing, a contact element configured to,when the base plate is arranged within the housing, provide anelectrical connection between the inside and the outside of the housing,and a connecting element configured to connect the contact element tothe base plate. The connecting element comprises a first electricallyinsulating layer, a second electrically insulating layer configured toattach the contact element to the first electrically insulating layer,and a third electrically insulating layer configured to attach the firstelectrically insulating layer to the base plate.

A power semiconductor module arrangement comprises a base plate to bearranged in a housing, and a contact element configured to, when thebase plate is arranged within the housing, provide an electricalconnection between the inside and the outside of the housing. A methodfor producing the power semiconductor module arrangement comprisesconnecting a first electrically insulating layer to the base plate andconnecting the contact element to the first electrically insulatinglayer. Connecting the first electrically insulating layer to the baseplate comprises forming a third electrically insulating layer on thebase plate or on the first electrically insulating layer and mountingthe first electrically insulating layer on the base plate such that thethird electrically insulating layer attaches the first electricallyinsulating layer to the base plate. Connecting the contact element tothe first electrically insulating layer comprises forming a secondelectrically insulating layer on the first electrically insulating layeror on the contact element and mounting the contact element on the firstelectrically insulating layer such that the second electricallyinsulating layer attaches the contact element to the first electricallyinsulating layer.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description, and uponviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention may be better understood with reference to the followingdrawings and the description. The components in the figures are notnecessarily to scale, emphasis instead being placed upon illustratingthe principles of the invention. Moreover, in the figures, likereferenced numerals designate corresponding parts throughout thedifferent views.

FIG. 1 is a cross-sectional view of a power semiconductor modulearrangement including a main substrate and a separate substrate.

FIG. 2 is a cross-sectional view of an example of a power semiconductormodule arrangement.

FIGS. 3A through 3D schematically illustrate an example of a method forproducing a power semiconductor module arrangement.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings. The drawings show specific examples in which theinvention may be practiced. It is to be understood that the features andprinciples described with respect to the various examples may becombined with each other, unless specifically noted otherwise. In thedescription as well as in the claims, designations of certain elementsas “first element”, “second element”, “third element” etc. are not to beunderstood as enumerative. Instead, such designations serve solely toaddress different “elements”. That is, e.g., the existence of a “thirdelement” does not require the existence of a “first element” and a“second element”. An electrical line or electrical connection asdescribed herein may be a single electrically conductive element, orinclude at least two individual electrically conductive elementsconnected in series and/or parallel. Electrical lines and electricalconnections may include metal and/or semiconductor material, and may bepermanently electrically conductive (i.e., non-switchable). Asemiconductor body as described herein may be made from (doped)semiconductor material and may be a semiconductor chip or be included ina semiconductor chip. A semiconductor body has electrically connectingpads and includes at least one semiconductor element with electrodes.

Referring to FIG. 1, a power semiconductor module arrangement isillustrated. The power semiconductor module arrangement includes a baseplate 30. A main substrate 20 is arranged on the base plate 30. The mainsubstrate 20 includes a dielectric insulation layer (21), a (structured)first metallization layer 211 attached to the dielectric insulationlayer 21, and a second metallization layer 212 attached to thedielectric insulation layer 21. The dielectric insulation layer 21 isdisposed between the first and second metallization layers 211, 212.

Each of the first and second metallization layers 211, 212 may consistof or include one of the following materials: copper; a copper alloy;aluminium; an aluminium alloy; any other metal or alloy that remainssolid during the operation of the power semiconductor modulearrangement. The main substrate 20 may be a ceramic substrate, that is,a main substrate in which the dielectric insulation layer 21 is aceramic, e.g., a thin ceramic layer. The ceramic may consist of orinclude one of the following materials: aluminium oxide; aluminiumnitride; zirconium oxide; silicon nitride; boron nitride; or any otherdielectric ceramic. For instance, the main substrate 20 may, e.g., be aDirect Copper Bonding (DCB) substrate, a Direct Aluminium Bonding (DAB)substrate, or an Active Metal Brazing (AMB) substrate. The mainsubstrate 20 may also be a conventional printed circuit board (PCB)having a non-ceramic dielectric insulation layer 21. For instance, anon-ceramic dielectric insulation layer 21 may consist of or include acured resin.

One or more semiconductor bodies 42 may be arranged on the mainsubstrate 20. The one or more semiconductor bodies 42 may form asemiconductor arrangement on the main substrate 20. The one or moresemiconductor bodies 42 may be electrically and mechanically connectedto the main substrate 20 by an electrically conductive connection layer(not illustrated in FIG. 1). Such an electrically conductive connectionlayer may be a solder layer, a layer of an electrically conductiveadhesive, or a layer of a sintered metal powder, e.g., a sintered silverpowder, for example. The main substrate 20 may be electrically andmechanically connected to the base plate 30 by a first connection layer31. The first connection layer 31 may be a solder layer, a layer of anelectrically conductive adhesive, or a layer of a sintered metal powder,e.g., a sintered silver powder, for example.

The base plate 30 may be arranged in a housing (not illustrated) to forma power semiconductor module. In order to facilitate an electricalconnection of the elements and components arranged on the base plate 30,e.g., the main substrate 21 and/or the semiconductor bodies 42 arrangedon the main substrate 21, to extemal components outside the housing suchas a supply terminal, an electrical load, or a controller, for example,the power semiconductor module arrangement includes a contact element41. The contact element 41 is arranged on the base plate 30. Generally,the contact element 41 is arranged on the same surface as the mainsubstrate 20 or any other elements that may be arranged on the baseplate 30. The contact element 41 is connected to the base plate 30 bymeans of a separate substrate 10. The separate substrate 10 is arrangedon the base plate 30, spaced apart from the main substrate 21. Theseparate substrate 10 includes a dielectric insulation layer 11, a firstmetallization layer 111 attached to the dielectric insulation layer 11,and a second metallization layer 112 attached to the dielectricinsulation layer 11. The dielectric insulation layer 11 is disposedbetween the first and second metallization layers 111, 112.

Each of the first and second metallization layers 111, 112 may consistof or include one of the following materials: copper; a copper alloy;aluminium; an aluminium alloy; or any other metal or alloy that remainssolid during the operation of the power semiconductor modulearrangement. The separate substrate 10 may be a ceramic substrate, thatis, a separate substrate in which the dielectric insulation layer 11 isa ceramic, e.g., a thin ceramic layer. The ceramic may consist of orinclude one of the following materials: aluminium oxide; aluminiumnitride; zirconium oxide; silicon nitride; boron nitride; any otherdielectric ceramic. For instance, the separate substrate 10 may be,e.g., a Direct Copper Bonding (DCB) substrate, a Direct AluminiumBonding (DAB) substrate, or an Active Metal Brazing (AMB) substrate. Theseparate substrate 10 may also be a conventional printed circuit board(PCB) having a non-ceramic dielectric insulation layer 11. For instance,a non-ceramic dielectric insulation layer 11 may consist of or include acured resin.

The separate substrate 10 may be electrically and mechanically connectedto the base plate 30 by a second connection layer 32. The secondconnection layer 32 may be a solder layer, a layer of an electricallyconductive adhesive, or a layer of a sintered metal powder, e.g., asintered silver powder, for example.

An electrical connection between the main substrate 20 and the separatesubstrate 10 includes at least one bonding wire 43. Each bonding wire 43is, at respective bonding locations, wire-bonded directly to both thefirst metallization layer 111 of the separate substrate 10 and one ofthe semiconductor bodies 42 arranged on the main substrate 20. Insteadof to one of the semiconductor bodies 42, a bonding wire 43 may bewire-bonded to the first metallization layer 211 of the main substrate20. The first metallization layer 111 of the separate substrate 10provides for an electrical connection between the at least one bondingwire 43 and the contact element 41. If a bonding wire 43 is wire-bondedto the first metallization layer 211 of the main substrate 20, the firstmetallization layer 211 of the main substrate 20 provides for anelectrical connection between the bonding wire 43 and at least one ofthe semiconductor bodies 42 arranged on the main substrate 20.

The contact element 41 may consist of or include a metal or metal alloy.For example, the contact element 41 may consist of or include copper.The contact element 41 may have an L-shape, for example. According toone example, when the contact element 41 is connected to the separatesubstrate 10, a first leg of the L-shaped contact element 41 may beessentially parallel to the base plate 30 and a second leg of theL-shaped contact element may be essentially perpendicular to the baseplate 30. The contact element 41 (e.g., the first leg of the contactelement 41) only partially covers an upper surface of the firstmetallization layer 111 of the separate substrate 41. There are areas ofthe upper surface of the first metallization layer 111 that remainuncovered by the contact element 41. In some applications, the powersemiconductor module arrangement may be exposed to corrosive gases suchas Cl⁻, H₂S, SO_(x), or NO_(x), for example. When exposed to corrosivegases and further under the influence of electric fields and possiblymoisture, dendritic structures may form from mobile metal ions (e.g.,Cu, Ag, etc.) of the first metallization layer 111 of the separatesubstrate 10 and anions (e.g., S²⁻) that are present in the corrosivegas. A dendrite is a characteristic tree-like structure of crystals.Dendritic growth in metal layers has large consequences with regard tomaterial properties and is generally unwanted.

Referring to FIG. 2, according to one example, in order to avoid theformation of dendritic structures, the separate substrate 10 of FIG. 1is replaced by a connecting element 50. The connecting element 50includes a first electrically insulating layer 51. The connectingelement 50 further includes a second electrically insulating layer 511and a third electrically insulating layer 512. The second electricallyinsulating layer 511 is configured to attach the contact element 41 tothe first electrically insulating layer 51. The third electricallyinsulating layer 512 is configured to attach the first electricallyinsulating layer 51 to the base plate 30.

According to one example, no mechanical tensions are introduced to thefirst electrically insulating layer 51 during the mounting process,i.e., when the contact element 41 is attached to the base plate 30. Thefirst electrically insulating layer 51, therefore, may include aninexpensive organic or an inorganic material. According to one example,the first electrically insulating layer 51 consists of or includes a rawceramic material such as Al₂O₃, ZrO₂, MgO, CaO, BaO, AlN, Si₃N₄, BeO orCeO₂, for example. According to another example, the first electricallyinsulating layer 51 consists of or includes a plastic material such aspolyethylene terephthalate (PET), polyethylene naphthalate (PEN),polycarbonate, polyvinylbutryral, polyacrylate, polyimide,polynorbomene, polyethersulfone (PES), or the like. Any combinations ofsuch plastic materials as well as combinations of plastic and ceramicmaterials are also possible. According to an even further example, thefirst electrically insulating layer 51 consists of or includes acomposite material.

The first insulating layer 51 may have a first thickness. The firstthickness is a dimension of the first electrically insulating layer 51in a direction perpendicular to the base plate 30, when the firstelectrically insulating layer 51 is connected to the base plate 30. Thefirst thickness may be between about 100 μm and about 1000 μm.

The second electrically insulating layer 511 may provide for a solid(substance-to-substance bond) and positive (positive-locking) connectionbetween the contact element 41 and the first electrically insulatinglayer 51. The second electrically insulating layer 511 may consist of orinclude an electrically insulating material. According to one example,the second electrically insulating layer 511 consists of or includes anadhesive such as a non-reactive or a reactive adhesive. A non-reactiveadhesive may consist of or include a polymer, natural rubber,polychloroprene or ethylene-vinyl acetate, for example. A reactiveadhesive may consist of or include polyester resin, polyols, acrylicpolymers, epoxies, urethanes, polyimides, or cyanoacrylates, forexample. The second electrically insulating layer 511 may have a secondthickness. The second thickness is a dimension of the secondelectrically insulating layer 511 in a direction perpendicular to thebase plate 30, when the second electrically insulating layer 511 isconnected to the base plate 30. The second thickness may be betweenabout 50 μm and about 1000 μm.

The third electrically insulating layer 512 may provide for a solid(substance-to-substance bond) and positive (positive-locking) connectionbetween the first electrically insulating layer 51 and the base plate30. The second electrically insulating layer 511 may consist of orinclude an electrically insulating material. According to one example,the second electrically insulating layer 511 consists of or includes anadhesive such as a non-reactive or a reactive adhesive. A non-reactiveadhesive may consist of or include a polymer, natural rubber,polychloroprene or ethylene-vinyl acetate, for example. A non-reactiveadhesive may also include electrically conductive materials such as Cu,for example, or may include particles of electrically insulatingmaterials, e.g., ceramic materials. A reactive adhesive may consist ofor include polyester resin, polyols, acrylic polymers, epoxies,urethanes, polyimides, or cyanoacrylates, for example. A reactiveadhesive may also include electrically conductive materials such as Cu,for example, or may include particles of electrically insulatingmaterials, e.g., ceramic materials. The third electrically insulatinglayer 512 may have a third thickness. The third thickness is a dimensionof the third electrically insulating layer 512 in a directionperpendicular to the base plate 30, when the third electricallyinsulating layer 512 is connected to the base plate 30. The thirdthickness may be between about 50 μm and about 1000 μm.

The second electrically insulating layer 511 and the third electricallyinsulating layer 512 may be identical, i.e., consist of or include thesame materials and/or have the same thickness. However, according toanother example, the second electrically insulating layer 511 mayinclude different materials than the third electrically insulating layer512, and/or the second electrically insulating layer 511 may have asecond thickness that is different from the third thickness of the thirdelectrically insulating layer 512.

No additional holding mechanisms or elements are needed to hold thecontact element 41 in place, as the connecting element 50 (with thesecond and third electrically insulating layers 511, 512) provides for asolid (substance-to-substance bond) and positive (positive-locking)connection between the contact element 41 and the base plate 30.

According to one example, an electrical connection between the contactelement 41 and other components or elements arranged on the base plate30 (e.g., the main substrate 20 and/or the semiconductor bodies 42 (orany other components) arranged on the main substrate 20) includes onebonding wire 43. According to another example, an electrical connectionbetween the contact element 41 and other components or elements arrangedon the base plate 30 includes more than one bonding wire 43 (notillustrated in FIG. 2). Each of the at least one bonding wire 43 is, atrespective bonding locations, wire-bonded directly to both the contactelement 41 and one of the semiconductor bodies 42 arranged on the mainsubstrate 20. According to one example, the at least one bonding wire 43is wire-bonded to an upper surface of the first leg of an L-shapedcontact element 41. An upper surface of the first leg of an L-shapedcontact element 41 is a surface facing away from the base plate 30.Instead of to one of the semiconductor bodies 42, a bonding wire 43 mayalso be wire-bonded to the first metallization layer 211 of the mainsubstrate 20, for example. If a bonding wire 43 is wire-bonded to thefirst metallization layer 211 of the main substrate 20, the firstmetallization layer 211 of the main substrate 20 provides for anelectrical connection between the bonding wire 43 and at least one ofthe semiconductor bodies 42 arranged on the main substrate 20.

Generally, an electrical connection between the contact element 41 and asemiconductor body 42 arranged on the main substrate 20 may consist ofor include one of the following electrically conductive elements: a wire(e.g., a bonding wire), a single metal sheet, a metal bar, a conductortrace of an electrically insulated carrier (substrate), a solder layer,a layer of sintered metal powder, an electrically conductive adhesive,or it may consist of or include any combination of two or more of thementioned elements. In case of the two or more electrically conductiveelements, the elements may be electrically connected in parallel and/orin series.

Referring to FIGS. 3A to 3D, an example of a method for producing apower semiconductor module arrangement is described. Referring to FIG.3A, a third electrically insulating layer 512 may be applied to a baseplate 30. Referring to FIG. 3B, the first electrically insulating layer51 may then be applied to the third electrically insulating layer 512.As has been described above, the third electrically insulating layer 512may consist of or include an adhesive. After applying the firstelectrically insulating layer 51 to the third electrically insulatinglayer 512, the third electrically insulating layer 512 may hold thefirst insulating layer 51 in place and connect the first insulatinglayer 51 to the base plate 30. The third electrically insulating layer512 may be deformed when the first electrically insulating layer 51 isapplied. For example, the first insulating layer 51 may be pressed ontothe third insulating layer 512 by applying a small amount of pressure tothe first insulating layer 51. The first insulating layer 51 may settleinto the material of the third insulating layer 512 such that the thirdinsulating layer 512 covers a bottom surface of the first insulatinglayer 51 and further at least partly covers the side surfaces of thefirst insulating layer 51. A bottom surface of the first insulatinglayer 51 is a surface facing towards the base plate 30. Side surfaces ofthe first electrically insulating layer 51 are surfaces that areessentially perpendicular to the base plate 30.

According to another example, the third electrically insulating layer512 is applied to the first electrically insulating layer 51 instead ofto the base plate 30. The first electrically insulating layer 51together with the third electrically insulating layer 512 appliedthereon is then mounted to the base plate 30. As has been explainedabove, the third electrically insulating layer 512 may hold the firstinsulating layer 51 in place and connect the first insulating layer 51to the base plate 30. The third electrically insulating layer 512 mayalso be deformed when the first electrically insulating layer 51 and thethird electrically insulating layer 512 are mounted to the base plate30.

Now referring to FIG. 3C, the second electrically insulating layer 511is applied to the first electrically insulating layer 51. Thecross-sectional area of the second electrically insulating layer 511 maybe smaller than the cross-sectional area of the first electricallyinsulating layer 51 such that the second electrically insulating layer511 only partially covers the top surface of the first electricallyinsulating layer 51. For example, the cross-sectional area of the secondelectrically insulating layer 511 may be less than 100%, less than 90%,less than 80% or less than 70% of the cross-sectional area of the firstelectrically insulating layer 51. In other words, the secondelectrically insulating layer 511 may cover less than 100%, less than90%, less than 80% or less than 70% of the top surface of the firstelectrically insulating layer 51, wherein the top surface of the firstelectrically insulating layer 51 is a surface facing away from the baseplate. The cross-sectional area of the second electrically insulatinglayer 511 may, for example, correspond to the cross sectional area ofthe first leg of an L-shaped contact element 41. The cross-sectionalarea of the first electrically insulating layer 51 may be essentiallyidentical to the cross sectional area of the second electricallyinsulating layer 511 or may be greater than the cross-sectional area ofthe second electrically insulating layer 511. If the cross-sectionalarea of the first electrically insulating layer 51 is greater than thecross-sectional area of the second electrically insulating layer 511,this may provide for more mechanical stability of the connecting element50 and, therefore, the contact element 41.

Referring to FIG. 3D, the contact element 41 is applied to the secondelectrically insulating layer 511 and is thereby fixed to the firstelectrically insulating layer 51. After applying the contact element 41to the second electrically insulating layer 511, the second electricallyinsulating layer 511 may hold the contact element 41 in place andconnect the contact element 41 to the first electrically insulatinglayer 51. The second electrically insulating layer 511 may be deformedwhen the contact element 41 is applied. For example, the contact element41 may be pressed onto the second insulating layer 511 by applying asmall amount of pressure to the contact element 41. The contact element41 may settle into the material of the second insulating layer 511 suchthat the second insulating layer 511 covers a bottom surface of thecontact element 41 and further at least partly covers the side surfacesof the contact element 41. A bottom surface of the contact element 41 isa surface facing towards the first electrically insulating layer 51.Side surfaces of the contact element 41 are surfaces that areessentially perpendicular to the first electrically insulating layer 51.

The second electrically insulating layer 511 and the contact element 41may be attached to the first electrically insulating layer 51 afterconnecting the first electrically insulating layer 51 to the base plate30. According to another example, the contact element 41 is attached tothe first electrically insulating layer 51 before the first electricallyinsulating layer 51 is mounted on the base plate 30. The connectingelement 50 may be mounted on the base plate 30 before a main substrate20 or any other components are mounted on the base plate 30. It is,however, also possible to mount the connecting element 50 on the baseplate 30 only after the main substrate 20 or any other components aremounted on the base plate 30.

Electrical connections such as bonding wires 43, for examples, betweenthe contact element 41 and the main substrate 20 or any other componentsthat are mounted on the base plate 30 are usually formed only after allcomponents have been mounted on the base plate.

The base plate 30 may be arranged in a housing (not illustrated). Thehousing may be a so-called PrimePack, e.g., PrimePack 2, PrimePack 3 orPrimePack with .XT, IHM-/IHV-B, or 62 mm-Package, for example. Any otherhousings, however, are possible which include contact elements. Each ofthe semiconductor bodies 42 arranged on the main substrate 20 mayinclude an IGBT (Insulated-Gate Bipolar Transistor), a MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor), a JFET (JunctionField-Effect Transistor), a HEMT (High-Electron-Mobility Transistor), orany other suitable controllable semiconductor element. Powersemiconductor modules are generally available in various configurationsas well as voltage and current classes.

With the above range of variations and applications in mind, it shouldbe understood that the present invention is not limited by the foregoingdescription, nor is it limited by the accompanying drawings. Instead,the present invention is limited only by the following claims and theirlegal equivalents.

What is claimed is:
 1. A power semiconductor module arrangement,comprising: a base plate configured to be arranged in a housing; acontact element configured to, when the base plate is arranged in thehousing, provide an electrical connection between an inside and anoutside of the housing; and a connecting element configured to connectthe contact element to the base plate, wherein the connecting elementcomprises: a first electrically insulating layer; a second electricallyinsulating layer configured to attach the contact element to the firstelectrically insulating layer; and a third electrically insulating layerconfigured to attach the first electrically insulating layer to the baseplate.
 2. The power semiconductor module arrangement of claim 1, whereinthe first electrically insulating layer comprises at least one of Al₂O₃,ZrO₂, MgO, CaO, BaO, CeO₂, AlN, Si₃N₄, BeO, polyethylene terephthalate(PET), polyethylene naphthalate (PEN), polycarbonate, polyvinylbutryral,polyacrylate, polyimide, polynorbomene, polyethersulfone (PES), and acomposite material.
 3. The power semiconductor module arrangement ofclaim 1, wherein at least one of the second electrically insulatinglayer and the third electrically insulating layer comprises at least oneof a non-reactive adhesive and a reactive adhesive.
 4. The powersemiconductor module arrangement of claim 3, wherein the non-reactiveadhesive comprises at least one of a polymer, natural rubber,polychloroprene, ethylene-vinyl acetate, an electrically conductivematerial, and particles of an electrically insulating material, andwherein the reactive adhesive comprises at least one of polyester resin,polyols, acrylic polymers, epoxies, urethanes, polyimides,cyanoacrylates, an electrically conductive material, and particles of anelectrically insulating material.
 5. The power semiconductor modulearrangement of claim 1, wherein the connecting element is configured toprovide a solid and positive connection between the contact element andthe base plate.
 6. The power semiconductor module arrangement of claim5, wherein at least one of: the second electrically insulating layer isconfigured to provide a solid and positive connection between thecontact element and the first electrically insulating layer; and thethird electrically insulating layer is configured to provide a solid andpositive connection between the first electrically insulating layer andthe base plate.
 7. The power semiconductor module arrangement of claim1, wherein a cross-sectional area of the second electrically insulatinglayer is less than 100%, less than 90%, less than 80% or less than 70%of a cross-sectional area of the first electrically insulating layer. 8.The power semiconductor module arrangement of claim 1, wherein the firstelectrically insulating layer has a first thickness in a directionperpendicular to the base plate, the second electrically insulatinglayer has a second thickness in a direction perpendicular to the baseplate and the third electrically insulating layer has a third thicknessin a direction perpendicular to the base plate, and wherein at least oneof the first thickness is between about 100 μm and about 1000 μm: thesecond thickness is between about 50 μm and about 1000 μm; and the thirdthickness is between about 50 μm and about 1000 μm.
 9. The powersemiconductor module arrangement of claim 1, further comprising: a mainsubstrate arranged on a surface of the base plate; and one or moresemiconductor bodies arranged on a surface of the main substrate thatfaces away from the base plate.
 10. The power semiconductor modulearrangement of claim 9, further comprising at least one electricalconnection between the contact element and the main substrate.
 11. Thepower semiconductor module arrangement of claim 10, wherein the at leastone electrical connection comprises at least one bonding wire.
 12. Thepower semiconductor module arrangement of claim 11, wherein the at leastone bonding wire is wire-bonded directly to the contact element.
 13. Thepower semiconductor module arrangement of claim 9, wherein the mainsubstrate comprises a dielectric insulation layer disposed between afirst and a second metallization layer.
 14. The power semiconductormodule arrangement of claim 1, wherein the contact element has a L-shapeand comprises a first leg that, when the contact element is connected tothe base plate, is approximately parallel to the base plate, and asecond leg that, when the contact element is connected to the baseplate, is approximately perpendicular to the base plate.
 15. A methodfor producing a power semiconductor module arrangement comprising a baseplate configured to be arranged in a housing, and a contact elementconfigured to, when the base plate is arranged in the housing, providean electrical connection between an inside and an outside of thehousing, the method comprising: connecting a first electricallyinsulating layer to the base plate; and connecting the contact elementto the first electrically insulating layer, wherein connecting the firstelectrically insulating layer to the base plate comprises forming athird electrically insulating layer on the base plate or on the firstelectrically insulating layer and mounting the first electricallyinsulating layer on the base plate such that the third electricallyinsulating layer attaches the first electrically insulating layer to thebase plate, wherein connecting the contact element to the firstelectrically insulating layer comprises forming a second electricallyinsulating layer on the first electrically insulating layer or on thecontact element and mounting the contact element on the firstelectrically insulating layer such that the second electricallyinsulating layer attaches the contact element to the first electricallyinsulating layer.
 16. The method of claim 15, further comprising:arranging a main substrate on a surface of the base plate; and arrangingone or more semiconductor bodies on a surface of the main substrate thatfaces away from the base plate.
 17. The method of claim 16, furthercomprising forming at least one electrical connection between thecontact element and the main substrate.
 18. The method of claim 17,wherein forming at least one electrical connection between the contactelement and the main substrate comprises forming at least one bondingwire between the contact element and the main substrate.
 19. The methodof claim 17, forming at least one electrical connection between thecontact element and the main substrate comprises wire bonding the atleast one bonding wire directly to the contact element.
 20. The methodof claim 16, wherein the main substrate comprises a dielectricinsulation layer disposed between a first and a second metallizationlayer.